Infineon · FETs & Power MOSFETs · MPN IPD60R600C6
No reviews yet — be the first to review Infineon IPD60R600C6.
| Gate Charge(Qg) | 20.5nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 63W |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF |
| RDS(on) | 600mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 440pF |
N-Channel 650V 7.3A 63W Surface Mount TO-252