Infineon IPD60R520CP

Infineon · FETs & Power MOSFETs · MPN IPD60R520CP

No reviews yet — be the first to review Infineon IPD60R520CP.

Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)32pF
Current - Continuous Drain(Id)6.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation66W
Reverse Transfer Capacitance (Crss@Vds)77pF
RDS(on)520mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)630pF

Technical details

600V 6.8A 3.5V 66W 520mΩ@10V 1 N-channel TO-252-3-313 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs