Infineon · FETs & Power MOSFETs · MPN IPD60R450E6ATMA1
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 41pF |
| Current - Continuous Drain(Id) | 9.2A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 74W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 450mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 620pF |
| Type | - |
600V 9.2A 3.5V 74W 450mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS