Infineon · FETs & Power MOSFETs · MPN IPD60R400CEAUMA1
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| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 14.7A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 112W |
| Reverse Transfer Capacitance (Crss@Vds) | 136pF |
| RDS(on) | 400mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 700pF |
N-Channel 650V 14.7A 112W Surface Mount TO-252