Infineon · FETs & Power MOSFETs · MPN IPD60R3K3C6ATMA1
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| Gate Charge(Qg) | 4.6nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 1.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 18.1W |
| RDS(on) | 3.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 93pF |
N-Channel 600V 1.7A 18.1W Surface Mount TO-252-3