Infineon · FETs & Power MOSFETs · MPN IPD60R360P7S
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| Gate Charge(Qg) | 13nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 41W |
| Reverse Transfer Capacitance (Crss@Vds) | 214pF |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 555pF |
650V 6A 41W Surface Mount TO-252-3