Infineon IPD60R280P7S

Infineon · FETs & Power MOSFETs · MPN IPD60R280P7S

No reviews yet — be the first to review Infineon IPD60R280P7S.

Specifications

Output Capacitance(Coss)-
Pd - Power Dissipation53W
Configuration-
Gate Charge(Qg)18nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)12A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)761pF

Technical details

N-Channel 650V 53W Surface Mount TO-252-3

Related FETs & Power MOSFETs