Infineon IPD60R280P7

Infineon · FETs & Power MOSFETs · MPN IPD60R280P7

No reviews yet — be the first to review Infineon IPD60R280P7.

Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation53W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)761pF

Technical details

650V 8A 3.5V 53W 280mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs