Infineon · FETs & Power MOSFETs · MPN IPD60R210PFD7S
No reviews yet — be the first to review Infineon IPD60R210PFD7S.
| Gate Charge(Qg) | 23nC@400V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 64W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 210mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.015nF |
650V 10A 3.5V 64W 210mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS