Infineon IPD60R210CFD7ATMA1

Infineon · FETs & Power MOSFETs · MPN IPD60R210CFD7ATMA1

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)18pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation64W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)210mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.015nF

Technical details

N-Channel 600V 12A 64W Surface Mount DPAK(TO-252)

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