Infineon IPD60R1K5CEAUMA1

Infineon · FETs & Power MOSFETs · MPN IPD60R1K5CEAUMA1

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Specifications

Gate Charge(Qg)9.4nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)16pF
Current - Continuous Drain(Id)5A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation49W
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)200pF

Technical details

600V 5A 49W Surface Mount TO-252-3

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