Infineon · FETs & Power MOSFETs · MPN IPD60R1K0PFD7S
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| Gate Charge(Qg) | 6nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 26W |
| RDS(on) | 1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 230pF |
650V 3A 3.5V 26W 1Ω@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS