Infineon · FETs & Power MOSFETs · MPN IPD60R1K0CE
No reviews yet — be the first to review Infineon IPD60R1K0CE.
| Gate Charge(Qg) | 13nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 21pF |
| Current - Continuous Drain(Id) | 6.8A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 61W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 280pF |
| Vgs | ±20V |
N-Channel 650V 6.8A 61W Surface Mount TO-252