Infineon IPD60R180P7S

Infineon · FETs & Power MOSFETs · MPN IPD60R180P7S

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)25nC@10V
Current - Continuous Drain(Id)53A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation72W
Reverse Transfer Capacitance (Crss@Vds)381pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.081nF

Technical details

N-Channel 650V 53A 72W Surface Mount TO-252-3

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