Infineon · FETs & Power MOSFETs · MPN IPD60R180CM8XTMA1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 17nC@10V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.7V |
| Pd - Power Dissipation | 127W |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
600V 18A 4.7V 127W 180mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS