Infineon · FETs & Power MOSFETs · MPN IPD60N10S4L12ATMA1
No reviews yet — be the first to review Infineon IPD60N10S4L12ATMA1.
| Gate Charge(Qg) | 49nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.07nF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 94W |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.17nF |
| Type | N-Channel |
100V 60A 2.1V 94W 12mΩ@10V 1 N-channel N-Channel TO-252-3-313 Single FETs, MOSFETs RoHS