Infineon · FETs & Power MOSFETs · MPN IPD60N10S4-12
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 94W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 12.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.47nF |
100V 60A 3.5V 94W 12.2mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS