Infineon · FETs & Power MOSFETs · MPN IPD600N25N3 G
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| Gate Charge(Qg) | 29nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 134pF |
| RDS(on) | 60mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.35nF |
N-Channel 250V 25A 136W Surface Mount TO-252-3