Infineon · FETs & Power MOSFETs · MPN IPD50R520CP
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| Gate Charge(Qg) | 13nC@10V |
|---|---|
| Drain to Source Voltage | 550V |
| Current - Continuous Drain(Id) | 7.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 66W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 520mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 680pF |
550V 7.1A 3V 66W 520mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS