Infineon IPD50R500CEAUMA1

Infineon · FETs & Power MOSFETs · MPN IPD50R500CEAUMA1

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Specifications

Gate Charge(Qg)18.7nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)31pF
Current - Continuous Drain(Id)7.6A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)500mΩ@13V
Number1 N-channel
Input Capacitance(Ciss)433pF
TypeN-Channel

Technical details

N-Channel 500V 7.6A 57W Surface Mount TO-252

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