Infineon · FETs & Power MOSFETs · MPN IPD50R3K0CE
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| Gate Charge(Qg) | 4.3nC@10V |
|---|---|
| Drain to Source Voltage | 550V |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 26W |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| RDS(on) | 3Ω@13V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 84pF |
550V 2.6A 3.5V 26W 3Ω@13V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS