Infineon IPD50R380CE

Infineon · FETs & Power MOSFETs · MPN IPD50R380CE

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Specifications

Gate Charge(Qg)24.8nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)14.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation98W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)380mΩ@13V
Number1 N-channel
Input Capacitance(Ciss)584pF

Technical details

N-Channel 500V 14.1A 98W Surface Mount TO-252

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