Infineon · FETs & Power MOSFETs · MPN IPD50R2K0CEAUMA1
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| Gate Charge(Qg) | 9nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 2Ω@13V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 124pF |
N-Channel 500V 3.6A 33W Surface Mount TO-252-3