Infineon IPD50R2K0CE

Infineon · FETs & Power MOSFETs · MPN IPD50R2K0CE

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage550V
Current - Continuous Drain(Id)3.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)2Ω@13V
Number1 N-channel
Input Capacitance(Ciss)124pF

Technical details

N-Channel 550V 3.6A 33W Surface Mount TO-252

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