Infineon · FETs & Power MOSFETs · MPN IPD50R280CEAUMA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 32.6nC@10V |
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 18.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 119W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 280mΩ@13V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 773pF |
N-Channel 500V 18.1A 119W Surface Mount TO-252