Infineon · FETs & Power MOSFETs · MPN IPD50P04P413ATMA1
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| Gate Charge(Qg) | 51nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 58W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 12.6mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.67nF |
P-Channel 40V 50A 58W Surface Mount TO-252