Infineon · FETs & Power MOSFETs · MPN IPD50P03P4L11
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.09nF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 58W |
| Reverse Transfer Capacitance (Crss@Vds) | 64pF |
| RDS(on) | 10.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.77nF |
| Type | P-Channel |
P-Channel 30V 50A 58W Surface Mount TO-252