Infineon IPD50N12S3L-15

Infineon · FETs & Power MOSFETs · MPN IPD50N12S3L-15

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Specifications

Gate Charge(Qg)57nC@10V
Drain to Source Voltage120V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.18nF

Technical details

120V 50A 1.2V 100W 15mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS

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