Infineon · FETs & Power MOSFETs · MPN IPD50N06S4L12
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 700pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.89nF |
| Type | N-Channel |
N-Channel 60V 50A 50W Surface Mount TO-252