Infineon · FETs & Power MOSFETs · MPN IPD50N06S4-09
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| Gate Charge(Qg) | 47nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 930pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 71W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.785nF |
| Type | N-Channel |
N-Channel 60V 50A 71W Surface Mount TO-252