Infineon · FETs & Power MOSFETs · MPN IPD50N06S3L-08
No reviews yet — be the first to review Infineon IPD50N06S3L-08.
| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Output Capacitance(Coss) | 1.22nF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 107W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.16nF |
| RDS(on) | 7.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.45nF |
| Type | N-Channel |
55V 50A 2.2V 107W 7.8mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS