Infineon · FETs & Power MOSFETs · MPN IPD50N06S3L-06
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| Gate Charge(Qg) | 145nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Output Capacitance(Coss) | 1.8nF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 136W |
| RDS(on) | 6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.7nF |
| Input Capacitance(Ciss) | 11.75nF |
| Type | N-Channel |
55V 50A 2.2V 136W 6mΩ@10V N-Channel TO-252-3 Single FETs, MOSFETs RoHS