Infineon · FETs & Power MOSFETs · MPN IPD50N04S4-08
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| Gate Charge(Qg) | 17.2nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 350pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 46W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 7.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.37nF |
| Type | N-Channel |
N-Channel 40V Surface Mount TO-252