Infineon · FETs & Power MOSFETs · MPN IPD50N04S3-09
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| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 63W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.75nF |
40V 50A 2.1V 63W 7.5mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS