Infineon · FETs & Power MOSFETs · MPN IPD50N03S2L06ATMA1
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 68nC@10V |
| Output Capacitance(Coss) | 760pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 6.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.9nF |
| Type | N-Channel |
N-Channel 30V 50A 136W Surface Mount TO-252