Infineon · FETs & Power MOSFETs · MPN IPD50N03S2-07
No reviews yet — be the first to review Infineon IPD50N03S2-07.
| Gate Charge(Qg) | 68nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 630pF |
| RDS(on) | 7.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
30V 50A 4V 136W 7.3mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS