Infineon IPD42DP15LMATMA1

Infineon · FETs & Power MOSFETs · MPN IPD42DP15LMATMA1

No reviews yet — be the first to review Infineon IPD42DP15LMATMA1.

Specifications

Gate Charge(Qg)43nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)87pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)420mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.1nF
TypeP-Channel

Technical details

P-Channel 150V 9A 83W Surface Mount TO-252

Related FETs & Power MOSFETs