Infineon · FETs & Power MOSFETs · MPN IPD40N03S4L-08
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 8.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.52nF |
30V 40A 42W 8.3mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS