Infineon IPD40DP06NMATMA1

Infineon · FETs & Power MOSFETs · MPN IPD40DP06NMATMA1

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Specifications

Gate Charge(Qg)6.7nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)4.3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation19W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)400mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)260pF
TypeP-Channel

Technical details

P-Channel 60V 4.3A 19W Surface Mount TO-252

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