Infineon IPD35N12S3L-24

Infineon · FETs & Power MOSFETs · MPN IPD35N12S3L-24

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Specifications

Gate Charge(Qg)39nC@10V
Drain to Source Voltage120V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation71W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)24mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.7nF

Technical details

120V 35A 1.2V 71W 24mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS

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