Infineon IPD350N06LGBTMA1

Infineon · FETs & Power MOSFETs · MPN IPD350N06LGBTMA1

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Specifications

Gate Charge(Qg)13nC@5V
Drain to Source Voltage60V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)29A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)35mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)800pF
TypeN-Channel

Technical details

N-Channel 60V 29A 68W Surface Mount TO-252

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