Infineon IPD320N20N3G

Infineon · FETs & Power MOSFETs · MPN IPD320N20N3G

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Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)32mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.35nF

Technical details

N-Channel 200V 34A 136W Surface Mount TO-252

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