Infineon IPD30N12S3L-31

Infineon · FETs & Power MOSFETs · MPN IPD30N12S3L-31

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Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage120V
Output Capacitance(Coss)494pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)31mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.976nF
TypeN-Channel

Technical details

N-Channel 120V 30A 57W Surface Mount TO-252-3

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