Infineon IPD30N08S2L21ATMA1

Infineon · FETs & Power MOSFETs · MPN IPD30N08S2L21ATMA1

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Specifications

Drain to Source Voltage75V
Gate Charge(Qg)72nC@10V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)20.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.65nF
TypeN-Channel

Technical details

N-Channel 75V 30A 136W Surface Mount TO-252

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