Infineon IPD30N06S4L-23

Infineon · FETs & Power MOSFETs · MPN IPD30N06S4L-23

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Specifications

Gate Charge(Qg)16.1nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)325pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.2nF
TypeN-Channel

Technical details

N-Channel 60V 36W Surface Mount TO-252-3

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