Infineon IPD30N06S3L-20

Infineon · FETs & Power MOSFETs · MPN IPD30N06S3L-20

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Specifications

Gate Charge(Qg)37nC@10V
Drain to Source Voltage55V
Output Capacitance(Coss)425pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)405pF
RDS(on)20mΩ@10V
Input Capacitance(Ciss)2.6nF
TypeN-Channel

Technical details

55V 30A 2.2V 45W 20mΩ@10V N-Channel TO-252-3 Single FETs, MOSFETs RoHS

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