Infineon IPD30N06S3-24

Infineon · FETs & Power MOSFETs · MPN IPD30N06S3-24

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Specifications

Configuration-
Gate Charge(Qg)31nC@10V
Drain to Source Voltage55V
Output Capacitance(Coss)420pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
RDS(on)24mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)400pF
Number1 N-channel
Input Capacitance(Ciss)2.14nF

Technical details

55V 30A 4V 45W 24mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS

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