Infineon · FETs & Power MOSFETs · MPN IPD30N06S2-23
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| Gate Charge(Qg) | 25nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 104pF |
| RDS(on) | 23mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 901pF |
55V 30A 2.1V 100W 23mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS