Infineon IPD30N03S4L14ATMA1

Infineon · FETs & Power MOSFETs · MPN IPD30N03S4L14ATMA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)14nC@10V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)13.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)980pF
TypeN-Channel

Technical details

N-Channel 30V 30A 31W Surface Mount TO-252

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