Infineon · FETs & Power MOSFETs · MPN IPD30N03S4L09ATMA1
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 20nC@10V |
| Output Capacitance(Coss) | 420pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.52nF |
| Type | N-Channel |
30V 30A 2.2V 42W 9mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS